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US 2003/0224535 A1Published application
Forming ferroelectric polymer memories
OwnerEbrahim Andideh, Mark Isenberger +2inventors
InventorsEbrahim Andideh, Mark Isenberger, Michael Leeson, Mani Rahnama
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Abstract
In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.
Claims30
A method comprising:
- forming a first layer of a ferroelectric polymer memory;
- forming a polyimide layer over said first layer;
- and
- forming a second layer of a ferroelectric polymer memory over said polyimide layer.
1 more element
A ferroelectric polymer memory comprising:
- a first layer including a ferroelectric polymer;
- a polyimide layer over said first layer;
- and
- a second layer containing a ferroelectric polymer over said polyimide layer.
1 more element
A method comprising:
- forming a ferroelectric polymer;
- forming a metal layer over said ferroelectric polymer;
- and
- plasma etching said metal layer using a gas mixture including helium.
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A method comprising:
- coating a metal layer with hexamethyldisilazane;
- and
- forming a layer of a polymer over said coating.
An integrated circuit comprising:
- a semiconductor structure;
- a metal layer over said semiconductor structure;
- a polymer layer over said metal layer;
- and
- an adhesion promoter between said polymer layer and said metal layer.
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Dependencies are inferred from the claim text.