Pattern formation method

Abstract

An underlying film having pores or including an organic material is formed on a substrate. In a first chamber, hexamethyldisilazane is supplied onto the surface of the underlying film while annealing the substrate, so as to form a first molecular layer of trimethylsilyl groups on the underlying film. Thereafter, the underlying film is allowed to stand outside the first chamber. Next, in a second chamber, hexamethyldisilazane is supplied onto the surface of the first molecular layer, so as to form a second molecular layer of trimethylsilyl groups on the first molecular layer. Then, a resist film made of a chemically amplified resist material is formed above the underlying film having the second molecular layer thereon. The resist film is subjected to pattern exposure by selectively irradiating with exposing light, and the resist film is developed after the pattern exposure, so as to form a resist pattern.

Dependencies are inferred from the claim text.