High k dielectric material and method of making a high k dielectric material
AssigneeAgere Systems Inc.
InventorsLalita Manchanda, Martin Laurence Green
Life of this patent
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Abstract
A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.
Claims26
A dielectric material comprising a Group III metal oxide and a Group V element.
An electronic component containing a layer of dielectric material, said dielectric material layer comprising a Group III metal oxide and a Group V element.
A method of fabricating a dielectric material, said method comprising:
- incorporating a Group V element in a Group III metal oxide.
Dependencies are inferred from the claim text.