Back to results
US 2003/0223261 A1Published application
Semiconductor memory device
AssigneeFujitsu Limited
InventorsYoshiharu Kato, Kazufumi Komura, Satoru Kawamoto
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeFujitsu Limited
InventorsYoshiharu Kato, Kazufumi Komura, Satoru Kawamoto
Estimating the term…
A semiconductor memory device having a driver transistor for the supply of electric power is provided, which can diminish leakage current during inactivation while ensuring sufficient power supply capability for a sense amplifier during activation. Gate width is provided at every two bit line pair pitches perpendicularly to a bit line direction, and a supply voltage VDD and a reference voltage VSS are fed to PMOS transistors SP0, SP0_ to SP3, sP3_ and NMOS transistors SN0, SN0_ to SN3, SN3_. In driver-dedicated PMOS transistors P1, P2, and NMOS transistors N1, N2, gate width is adjusted using the length of two bit line pair pitches as a maximum value, while gate length is adjusted using an adjusting region ΔL, whereby there can be obtained driver-dedicated MOS transistors P1, P2, N1, and N2 in an appropriately adjusted state with respect to such characteristics contrary to each other as ensuring sufficient current supply capability and diminishing a tailing current.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device including at least one driver-dedicated MOS transistor for the supply of electric power to at least one sense amplifier, wherein in an inactive state not involving an access operation, a difference in applied voltage at a gate terminal relative to a source terminal of the driver-dedicated MOS transistor is reverse-biased relative to a voltage difference in a conductive state.
A semiconductor memory device including at least one driver-dedicated MOS transistor for the supply of electric power to at least one sense amplifier, wherein in an active state of the sense amplifier, a difference in applied voltage at a gate terminal relative to a source terminal of the driver-dedicated MOS transistor is forward-biased more deeply than a voltage difference in a conductive state.
A semiconductor memory device including driver-dedicated MOS transistor for the supply of electric power to a sense amplifier, the driver-dedicated MOS transistor being deeper in threshold voltage than a sense amplifier-dedicated MOS transistor which constitutes the sense amplifier.
Dependencies are inferred from the claim text.