Thin film apparatus, a manufacturing method of the thin film apparatus, an active matrix substrate, a manufacturing method of the active matrix substrate, and an electro-optical apparatus having the active matrix substrate
AssigneeRicoh Company, Ltd.
InventorYoshikazu Akiyama
Life of this patent
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Abstract
A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.
Claims19
A manufacturing method of a thin film apparatus, comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming a thin film device on the separation layer;
- a third step for providing a surface layer at a side of the thin film device opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film device,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic that generates a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
A thin film apparatus manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming a thin film device on the separation layer;
- a third step for providing a surface layer at a side of the thin film device opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film device,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic that generates a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
A manufacturing method of an active matrix substrate having a thin film transistor as forming a matrix, comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming a thin film transistor for pixel switching on the separation layer as forming a matrix;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic that generats a peeling phenomenon because of a reduction of an adhering force to the heat-resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
A manufacturing method of an active matrix substrate having a driving circuit providing a thin film transistor, comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for the driving circuit on the separation layer;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
An active matrix substrate having a thin film transistor as forming a matrix manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for pixel switching on the separation layer as forming a matrix;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
An active matrix substrate having a driving circuit providing a thin film transistor, manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for the driving circuit on the separation layer;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
An electro-optical apparatus having an active matrix substrate, the active matrix substrate having a thin film transistor as forming a matrix manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for pixel switching on the separation layer as forming the matrix;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
An electro-optical apparatus having an active matrix substrate, the active matrix substrate having a driving circuit providing a thin film transistor, manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for the driving circuit on the separation layer;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
An electro-optical apparatus having an active matrix substrate and a liquid crystal element or an electrophoresis display element, the active matrix substrate having a thin film transistor as forming a matrix manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for pixel switching on the separation layer as forming the matrix;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another side that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
An electro-optical apparatus having an active matrix substrate and a liquid crystal element or an electrophoresis display element, the active matrix substrate having a driving circuit providing a thin film transistor, manufactured by a manufacturing method, the manufacturing method comprising:
- a first step for forming a separation layer on a heat resistant substrate;
- a second step for forming the thin film transistor for the driving circuit on the separation layer;
- a third step for providing a surface layer at a side of the thin film transistor opposite to another that faces the heat resistant substrate;
- and
- a fourth step for generating a peeling phenomenon at an interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from the other side of the thin film transistor,
- wherein an organic layer is formed as the separation layer in the first step, the organic layer having a characteristic generating a peeling phenomenon because of a reduction of an adhering force to the heat resistant substrate of the separation layer based on a liquid phase existing at the interface of the separation layer and the heat resistant substrate, and
- the peeling phenomenon is generated in the fourth step by generating the liquid phase at the interface of the separation layer and the heat resistant substrate.
Dependencies are inferred from the claim text.