Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate;
• a gate electrode;
• a first insulating film formed between the semiconductor substrate and the gate electrode;
• and
• a second insulating film formed near the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen;
• and
• wherein a concentration of hydrogen contained in the lower silicon nitride film is higher than a concentration of hydrogen contained in the upper silicon nitride film.

A semiconductor device comprising:

• a plurality of memory cells connected in series and each comprising:
• a semiconductor substrate including a source region, a drain region, and a channel region sandwiched between the source region and the drain region;
• a first insulating film formed on the semiconductor substrate;
• a second insulating film formed on the first insulating film and storing charges injected from the semiconductor substrate through the first insulating film, the second insulating film including a lower silicon nitride film having a thickness of at least 1 nm and at most 4 nm and an upper silicon nitride film formed on the lower silicon nitride film;
• a third insulating film formed on the second insulating film;
• and
• a control gate electrode formed on the third insulating film.

A semiconductor device comprising:

• a semiconductor substrate including a source region, a drain region and a channel region sandwiched between the source region and the drain region;
• a first insulating film formed on the semiconductor substrate;
• a second insulating film formed on the first insulating film and storing charges injected from the semiconductor substrate through the first insulating film, the second insulating film including a lower silicon nitride film having a thickness of at least 1 nm and at most 4 nm and an upper silicon nitride film formed on the lower silicon nitride film;
• a third insulating film formed on the second insulating film;
• and
• a control gate electrode formed on the third insulating film;
• and
• wherein the second insulating film has a first region located near the source region and a second region located near the drain region, and charges are to be stored independently in the first region and in the second area.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film on a semiconductor substrate;
• forming a second insulating film on a region including the first insulating film;
• and
• wherein forming the second insulating film comprises:
• forming a first silicon nitride film using a first silicon source containing tetrachlorosilane and a first nitrogen source;
• and
• forming a second silicon nitride film on the first silicon nitride film using a second silicon source other than tetrachlorosilane and a second nitrogen source.

A semiconductor device comprising:

• a semiconductor substrate;
• a gate electrode;
• a first insulating film formed between the semiconductor substrate and the gate electrode;
• and
• a second insulating film formed near the gate electrode and including a silicon nitride film containing nitrogen, silicon and hydrogen;
• and
• wherein a ratio of the number of deuterium atoms to the number of hydrogen atoms contained in the silicon nitride film is at least 0.9.

A method of manufacturing a semiconductor device comprising:

• forming a first insulating film on a semiconductor substrate;
• and
• forming a second insulating film on a region including the first insulating film;
• and
• wherein forming the second insulating film includes forming a silicon nitride film using a silicon source and a nitrogen source containing deuterium.

A semiconductor device comprising:

• a semiconductor substrate;
• a control gate electrode;
• a silicon nitride film formed between the semiconductor substrate and the control gate electrode and containing silicon, nitrogen and deuterium boned to nitrogen;
• and
• a charge storage film formed between the control gate electrode and the silicon nitride film and storing charges injected from the semiconductor substrate through the silicon nitride film.