Aqueous ammonium hydroxise amorphous silicon etch method for forming microelectronic capacitor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Hsing Yu, Chih-Yang Pai, Chia-Shiung Tsai
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Abstract
Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.
Claims14
A method for fabricating a capacitor structure comprising:
- providing a substrate;
- forming over the substrate a first capacitor plate layer;
- forming upon the first capacitor plate layer a capacitor dielectric layer;
- and
- forming upon the capacitor dielectric layer a second capacitor plate layer, wherein:
- at least one of the first capacitor plate layer and the second capacitor plate layer is formed of a doped amorphous silicon material.
A method for fabricating a dynamic random access memory cell structure comprising:
- providing a semiconductor substrate having formed therein a field effect transistor device;
- forming over the semiconductor substrate and electrically connected with a first source/drain region within the field effect transistor device a capacitor structure comprising:
- a first capacitor plate layer;
- a capacitor dielectric layer formed upon the first capacitor plate layer;
- and
- a second capacitor plate layer formed upon the capacitor dielectric layer, wherein:
- at least one of the first capacitor plate layer and the second capacitor plate layer is formed of a doped amorphous silicon material.
A capacitor structure comprising:
- a substrate;
- a first capacitor plate layer formed over the substrate;
- a capacitor dielectric layer formed upon the first capacitor plate layer;
- and
- a second capacitor plate layer formed upon the capacitor dielectric layer, wherein:
- at least one of the first capacitor plate layer and the second capacitor plate layer is formed of a doped amorphous silicon material.
A dynamic random access memory cell structure comprising:
- a semiconductor substrate having formed therein a field effect transistor device;
- a capacitor structure formed over the semiconductor substrate and electrically connected with a first source/drain region within the field effect transistor device, the capacitor structure comprising:
- a first capacitor plate layer;
- a capacitor dielectric layer formed upon the first capacitor plate layer;
- and
- a second capacitor plate layer formed upon the capacitor dielectric layer, wherein:
- at least one of the first capacitor plate layer and the second capacitor plate layer is formed of a doped amorphous silicon material.
Dependencies are inferred from the claim text.