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US 2003/0222297 A1Published application
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
AssigneeInfineon Technologies AG
InventorsJoachim Krumrey, Franz Hirler, Ralf Henninger, Martin Plolz, Walter Rieger
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Abstract
Transistor configurations have trench transistor cells disposed along trenches in a semiconductor substrate with two or more electrode structures disposed in the trenches, and also metallizations are disposed above a substrate surface of the semiconductor substrate. The trenches extend into an inactive edge region of the transistor configuration and an electrically conductive connection between the electrode structures and corresponding metallizations are provided in the edge region.
Claims17
A transistor configuration, comprising:
- at least one gate terminal;
- at least one source terminal;
- at least one drain terminal;
- a semiconductor substrate having a substrate surface;
- at least one active cell array formed in said semiconductor substrate, said semiconductor substrate having-at least one trench formed therein within said active cell array
- an edge region adjoining said active cell array and said trench extending into said edge region;
- at least one trench transistor cell formed along said trench;
- at least two electrode structures disposed within said trench and extending along said trench;
- and
- metallizations disposed substantially above said substrate surface of said semiconductor substrate, at least one of said two electrode structures electrically conductively connected to one of said metallizations in said edge region.
7 more elements
Dependencies are inferred from the claim text.