Back to results
US 2003/0222280 A1Published application
Apparatus and method for dual cell common electrode PCRAM memory device
AssigneeMicron Technology, Inc.
InventorJohn Moore
Life of this patent
Estimating the term…
Abstract
Two PCRAM cells which use a common anode between them are disclosed. The two memory cells can be accessed separately to store two bits of data which can be read and written, and can be stacked one over the other with a common anode between them to form an upper and lower cell pair. Respective access transistors are provided for the cells and arranged to permit reading and writing of the cells.
Claims46
A memory device comprising:
- a first memory cell which includes a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material;
- a second memory cell which includes a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material;
- said first and second memory cells being in contact with each other such that they share a common anode.
A method of fabricating a memory device comprising:
- forming a first memory cell to include a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material;
- forming a second memory cell to include a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material;
- forming a common anode for both of said first and second memory cells.
A computer system comprising:
- a processor;
- a memory device electrically coupled to said processor, said memory device comprising:
- a first memory cell which includes a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material;
- a second memory cell which includes a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material;
- said first and second memory cells being in contact with each other such that they share a common anode.
2 more elements
Dependencies are inferred from the claim text.