Method for producing a device having a semiconductor layer on a lattice mismatched substrate
OwnerGiovanni Flamand, Jef Poortmansinventors
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Abstract
The present invention relates to a layer stack comprising a monocrystalline layer located upon a porous surface of a substrate, said monocrystalline layer and said substrate being significantly lattice mismatched, obtainable by a process comprising a sublimation or an evaporation step by emission from a source and an incomplete filling step of said porous surface by said sublimated or evaporated emission.
Claims24
A device comprising a layer stack, the layer stack comprising a substantially dislocation-free monocrystalline layer atop a porous surface of a substrate, wherein a difference in lattice constants between the substrate and the monocrystalline layer is greater than or equal to 0.3%, wherein the monocrystalline layer comprises germanium, wherein the substrate comprises silicon, wherein the porous surface comprises a plurality of pores, wherein the porous surface has a pore volume greater than or equal to about 10 vol. %, wherein the pores are partially filled with a material, wherein the material comprises germanium, and wherein a plurality of voids are situated between the monocrystalline layer and the substrate.
A method for fabricating a free standing device comprising a layer stack, the method comprising the steps of:
- providing a substrate, the substrate comprising a porous surface, the porous surface comprising a plurality of pores;
- sublimating or evaporating a material;
- depositing the sublimated or evaporated material in the pores of the porous surface, whereby the pores are partially filled with the material;
- and
- growing a substantially dislocation-free monocrystalline layer on the substrate, wherein the substrate and the monocrystalline layer are significantly lattice mismatched, thereby obtaining a layer stack.
A method for producing a device, the device comprising a dislocation-free monocrystalline layer situated atop a porous surface of a substrate, the monocrystalline layer and the substrate being significantly lattice mismatched, the method comprising the steps of:
- providing a substrate, the substrate comprising a porous layer at a surface of the substrate, the porous later comprising a plurality of pores;
- sublimating or evaporating a material from a source, whereby the material is oxidized to yield an oxidized source material;
- and
- depositing the oxidized source material in the pores, whereby the oxidized source material is reduced.
Dependencies are inferred from the claim text.