Method of manufacturing semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHiroshi Kawashima, Motoshige Igarashi, Keiichi Higashitani
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Abstract
A thermal process for activating respective impurities in a polysilicon film to be a gate electrode and a resistance element is performed with the polysilicon film to be the gate electrode and the resistance element being coated with an oxide film, after the respective impurities are implanted into the polysilicon film to be the gate electrode and the resistance element. Here, concentrations of the respective impurities in the polysilicon film to be the gate electrode and the resistance element are adjusted by controlling the thickness of the oxide film. The degree of impurity activation is thereby adjusted.
Claims3
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive silicon film having a prescribed pattern including an impurity;
- coating a surface of the conductive silicon film having the prescribed pattern with a coating film;
- and
- performing a thermal process for activating said impurity, wherein
- a concentration of said impurity is adjusted by controlling a thickness of said coating film.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive silicon film including an impurity;
- forming a coating film on an upper surface of said conductive silicon film;
- forming a conductive silicon film having a prescribed pattern including an impurity by etching said conductive silicon film including an impurity using said coating film as a mask;
- and
- performing a thermal process for activating said impurity, wherein
- a concentration of said impurity is adjusted by controlling a thickness of said coating film.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive silicon film having one prescribed pattern including an impurity that is coated with one coating film and a conductive silicon film having another prescribed pattern including said impurity that is coated with another coating film different from said one coating film in thickness;
- and
- performing a thermal process for activating said impurity.
Dependencies are inferred from the claim text.