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US 2003/0216014 A1Published application
Monatomic boron ion source and method
AssigneeApplied Materials, Inc.
InventorRichard David Goldberg
Life of this patent
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Abstract
Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.
Claims13
A method of providing monatomic boron ions for ion implantation, comprising
- supplying decaborane vapour into a plasma chamber, and
- generating a plasma in said plasma chamber having a sufficient energy density to disassociate decaborane molecules to produce monatomic boron ions in the plasma.
A source of monatomic boron ions for an ion implanter, comprising
- a plasma chamber,
- decaborane vapour supply,
- a supply of a plasma supporting gas, other than decaborane vapour,
- an energy supply to said plasma chamber to form a plasma therein having an energy density sufficient to disassociate decaborane molecules to produce monatomic boron, and
- a controller to control said decaborane vapour supply and said supporting gas supply to provide a simultaneous supply to the plasma chamber of decaborane vapour and said supporting gas.
2 more elements
Dependencies are inferred from the claim text.