US 2003/0215985 A1 · Semiconductor wafer and manufacturing method of semiconductor device

Abstract

Gate oxide films, gate electrodes, base regions and emitter regions, which constitute IGBTs, are formed on a semiconductor wafer. A silicon oxide film is formed on the gate electrodes. Further, an emitter electrode is formed thereabove, and a passivation film is formed over the emitter electrode. Thereafter, an internal area of a back surface of the semiconductor wafer is polished to form a protrusion at its outer peripheral portion. Afterwards, an impurity is injected from the back surface of the semiconductor wafer to form a collector region. After a collector electrode is further formed, the semiconductor wafer is mounted on a stage smaller than the internal area and subjected to dicing along scribe areas. Thus, the strength of the semiconductor wafer is held by the protrusion, and cracking or the like of the semiconductor wafer can be reduced owing to the execution of the dicing in the above-described manner.

Claims19

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

(a) preparing a semiconductor wafer having a plurality of chip areas respectively comparted by scribe areas;
(b) polishing an internal area of a back surface of the semiconductor wafer to thereby form a protrusion at an outer peripheral portion of the back surface of the semiconductor wafer;
(c) mounting the semiconductor wafer on a support table whose surface is smaller than the internal area of the semiconductor wafer and supporting the internal area of the back surface of the semiconductor wafer by the support table;
and
(d) cutting the scribe areas on the surface of the semiconductor wafer after the (c) step.

2 more elements

A method of manufacturing a semiconductor device, comprising the steps of:

(a) preparing a semiconductor wafer having a plurality of chip areas respectively comparted by scribe areas;
(b) over the chip area, including the steps of:
(b1) forming a first insulating film;
(b2) forming a first conductive film over the first insulating film;
(b3) selectively removing the first conductive film to thereby form gate electrodes;
(b4) forming a first semiconductor region of first conductivity type in the semiconductor wafer on both sides of each of the gate electrodes;
(b5) forming a second semiconductor region of second conductivity type opposite to the first conductivity type in the first semiconductor region;
(b6) forming a second insulating film having openings over the second semiconductor region over the semiconductor wafer;
(b7) forming a second conductive film over the second semiconductor region including the interiors of the openings;
(b8) selectively removing the second conductive film to thereby form wirings;
and
(b9) forming a protective film corresponding to an insulating film of a top layer for covering the wirings, over the wirings,
(c) after the (b2) step, the (b7) step or the (b9) step, polishing an internal area of a back surface of the semiconductor wafer to thereby form a protrusion at an outer peripheral portion of the back surface of the semiconductor wafer;
(d) performing processing on the back surface of the semiconductor wafer after the (c) step, said step including the steps of:
(d1) forming a third semiconductor region of the first conductivity type on the back surface of the semiconductor wafer;
and
(d2) forming a third conductive film on the back surface of the semiconductor wafer,
(e) mounting the semiconductor wafer on a support table whose surface is smaller than the internal area of the semiconductor wafer and supporting the internal area of the back surface of the semiconductor wafer by the support table;
and
(f) cutting the scribe areas of the semiconductor wafer after the (e) step.

17 more elements

Dependencies are inferred from the claim text.

Semiconductor wafer and manufacturing method of semiconductor device

Life of this patent

Semiconductor wafer and manufacturing method of semiconductor device

Life of this patent

Abstract

Claims19