Method for making tapered opening for programmable resistance memory element
AssigneesBAE Systems Information and Ovonyx, Inc, Electronic Systems Integration Inc.
InventorsJon Maimon, John Rodgers
Life of this patent
Estimating the term…
Abstract
A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
Claims31
A method of fabricating a second opening, comprising:
- providing a layer of a first material;
- forming a layer of a second material over said layer of said first material;
- forming a layer of a third material over said layer of said second material;
- forming a first opening in said layer of said third material to expose said second material;
- forming a sidewall spacer of a fourth material on a sidewall surface of said first opening;
- removing a portion of said layer of said second material to form a recess in said layer of said second material;
- and
- removing said third material, said fourth material and an additional portion of said second material to form said second opening in said layer of said second material to expose said first material.
A method of fabricating a memory element, comprising:
- providing a layer of a first material;
- forming said layer of said second material over said layer of said first material;
- forming a layer of a third material over said layer of said second material;
- forming an opening in said layer of said third material to expose said second material;
- forming a sidewall spacer of a fourth material on a sidewall surface of said opening;
- removing a portion of said second material to form a recess in said layer of said second material;
- removing said third material, said fourth material and an additional portion of said layer of said second material to form an opening in said layer of said second material to expose said first material;
- and
- forming a programmable resistance material in said opening of said second material.
The method of claim 22, wherein said opening in said layer of said second material is a trench.
The method of claim 22, wherein said opening in said third material does not extend into substantially any of said layer of said second material.
The method of claim 22, wherein said opening in said third material extends partially into said layer of said second material.
The method of claim 22, wherein third material and said fourth material are the same material.
The method of claim 22, wherein said first material is a conductive material.
The method of claim 22, wherein said second material is a dielectric material.
Dependencies are inferred from the claim text.