Enhancement of membrane characteristics in semiconductor device with membrane
AssigneeDenso Corporation
InventorsEishi Kawasaki, Hisanori Yokura, Kazuhiko Sugiura
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Abstract
A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.
Claims4
A method for manufacturing a semiconductor device including a semiconductor substrate and a membrane, wherein a cavity is located between an active surface of the semiconductor substrate and the membrane and hermetically sealed, the method comprising:
- forming a sacrificial layer at a position where a cavity is to he formed on an active surface of a semiconductor substrate;
- forming a first film, a part of which is to be a part of a membrane, to cover the sacrificial layer;
- forming a through hole, which extends through the first film;
- forming a reflow layer, which is made of a material that becomes viscous when heated, to cover the first film such that the through hole are plugged by the reflow layer;
- forming an etching hole, which permits the sacrificial layer to be exposed to an outside, such that the etching hole is located at a position corresponding to the through hole;
- etching the sacrificial layer through the etching hole to form a cavity;
- and
- reflowing the reflow layer by heating to form a second film, a part of which is to be a part of the membrane, wherein the etching hole and the through hole are plugged by the second film when the reflow layer is reflowed.
A method for manufacturing a semiconductor device including a semiconductor substrate and a membrane, wherein a cavity is located between an active surface of the semiconductor substrate and the membrane and hermetically sealed, the method comprising:
- forming a sacrificial layer at a position where a cavity is to be formed on an active surface of a semiconductor substrate;
- forming a first film, a part of which is to be a part of a membrane, to cover the sacrificial layer;
- forming a reflow layer, which is made of a material that becomes viscous when heated, to cover the second film;
- forming simultaneously a through hole, which extends through the first film, and an etching hole, which permits the sacrificial layer to be exposed to an outside;
- etching the sacrificial layer through the etching hole to form a cavity;
- and
- reflowing the reflow layer by heating to form a second film, a part of which is to be a part of the membrane, wherein the etching hole and the through hole are plugged by the second film when the reflow layer is reflowed.
A semiconductor device having a membrane comprising:
- a semiconductor substrate, which has an active surface;
- and
- a membrane, wherein a cavity is located between the active surface and the membrane and hermetically sealed, wherein the membrane includes:
- a first film, which has a through hole that extends through the first film;
- and
- a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated, wherein the through hole has been plugged by the second film to hermetically seal the cavity.
Dependencies are inferred from the claim text.