US 2003/0215973 A1 · Manufacturing method of semiconductor device

Abstract

Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.

Claims14

Dependent claims

A manufacturing method of semiconductor device provided with a thin film transistor over a substrate having an insulation surface, comprising:

forming a non-monocrystal semiconductor over said substrate;
forming a marker and an island-like semiconductor layer A, which is a specific area including an area to become an active layer of said thin film transistor, in said non-monocrystal semiconductor in accordance with a layout information of said thin film transistor;
forming a crystallization area by irradiating a laser beam selectively to said island-like semiconductor layer A using said marker as a positional reference;
and
etching a periphery area of said island-like semiconductor layer A to form an island-like semiconductor layer B, which becomes an active layer area of said thin film transistor,
wherein said laser beam is a laser beam of pulse oscillation, and
the pulse width of said laser beam of pulse oscillation is 50 ns or more.

4 more elements

Dependencies are inferred from the claim text.

Manufacturing method of semiconductor device

Life of this patent

Manufacturing method of semiconductor device

Life of this patent

Abstract

Claims14