Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection
AssigneeThe Regents of the University of California
InventorsJeffrey J. Peterson, Charles E. Hunt
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Abstract
One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.
Claims43
A method for using selective etching to form optical components on a circuit device, comprising:
- receiving a substrate composed of a first material including a buffer layer composed of a second material;
- forming a sacrificial layer composed of a third material on the buffer layer;
- forming an epitaxial blocking layer on the substrate, wherein the epitaxial blocking layer has windows exposing the sacrificial layer;
- forming optical components composed of a fourth material on exposed portions of the sacrificial layer;
- and
- performing an etching operation using a selective etchant to remove the sacrificial layer.
A method to facilitate integrating active components on a circuit device, wherein the circuit device includes an optical fiber core that was epitaxially grown, comprising;
- receiving the circuit device;
- etching a cavity into the circuit device, wherein the cavity passes through the optical fiber core;
- and
- creating a device within the cavity, wherein the device is aligned with the optical fiber core and wherein the device is an active device or a passive device.
A method to facilitate self aligned connections, wherein creating a device includes creating a self-aligned device that is self-aligned to an external fiber.
An integrated circuit device with an optical fiber core created using a selective etching process, the selective etching process comprising:
- receiving a substrate composed of a first material including a buffer layer composed of a second material;
- forming a sacrificial layer composed of a third material on the buffer layer;
- forming an epitaxial blocking layer on the substrate, wherein the epitaxial blocking layer has windows exposing the sacrificial layer;
- forming optical components composed of a fourth material on exposed portions of the sacrificial layer;
- and
- performing an etching operation using a selective etchant to remove the sacrificial layer.
An integrated circuit device including an optical fiber core created using a selective etching process, wherein the integrated circuit device includes integrated active components created by a process comprising:
- receiving a circuit device including the optical fiber core;
- etching a cavity into the circuit device, wherein the cavity passes through the optical fiber core;
- and
- creating a device within the cavity, wherein the device is aligned with the optical fiber core and wherein the device is an active device or a passive device.
Dependencies are inferred from the claim text.