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US 2003/0215752 A1Published application
Device manufacturing method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoshiharu Ono, Takayuki Saito
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Abstract
An insulating film is formed on a semiconductor substrate and a photoresist film is formed on the insulating film. The photoresist film is patterned so that a first mask pattern including a thin film portion is formed. A photoresist film is formed over the first mask pattern so as to cover the thin film portion. A second mask pattern is formed by patterning this photoresist film and, at the same time, a portion of the photoresist film is left on the thin film portion. The insulating film is processed using the first and second mask patterns.
Claims6
A device manufacturing method comprising the steps of:
- forming a first mask film on an underlying portion;
- forming a first mask pattern including a thin film portion by patterning said first mask film;
- forming a second mask film on the first mask pattern so as to cover said thin film portion;
- forming a second mask pattern by patterning said second mask film and leaving a portion of said second mask film on said thin film portion;
- and
- processing said underlying portion using said first and second mask patterns.
3 more elements
Dependencies are inferred from the claim text.