Magnetic random access memory

A magnetic random access memory comprising:

• a memory cell which is formed on a semiconductor substrate and in which a magneto resistive effect is used;
• a first write line which is disposed right under the memory cell and which extends in a first direction;
• a second write line which is disposed right on the memory cell and which extends in a second direction intersecting with the first direction;
• and
• a hard magnetic material with which a part of the surface of the second write line is coated.

A magnetic random access memory comprising:

• memory cells in which a magneto resistive effect is used to store data;
• a write line shared by the memory cells;
• and
• hard magnetic materials which are disposed in a part of the surface of the write line right under the memory cells.

A manufacturing method of a magnetic random access memory, comprising:

• forming an insulating layer on a semiconductor substrate;
• forming a wiring trench in the insulating layer;
• forming a hard magnetic material on the insulating layer and on bottom and side wall portions of the wiring trench;
• filling the wiring trench with a conductive material to form a write line;
• removing the hard magnetic material on the insulating layer and allowing the hard magnetic material to remain in the bottom and side wall portions of the wiring trench;
• and
• forming a MTJ element right on the write line.

A manufacturing method of a magnetic random access memory, comprising:

• forming a MTJ element on a semiconductor substrate;
• forming an insulating layer on the MTJ element;
• forming a wiring trench in the insulating layer on the MTJ element;
• forming a hard magnetic material in a side wall portion of the wiring trench;
• and
• filling the wiring trench with a conductive material to form a write line.