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US 2003/0214852 A1Published application
Flash memory device and method of erasing the same
AssigneeHynix Semiconductor Inc.
InventorSeung Ho Chang
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Abstract
The present invention relates to a flash memory device and a method of erasing the same. Pre-program and post-program operations are performed using an automatic verify program method, and an erase operation is performed using an iterative program and verify method, by the use of sense amplifiers that can perform the iterative program and verify method and the automatic verify program method.
Claims11
A flash memory device, comprising:
- a plurality of sector units including a plurality of memory cells;
- a sense amplifier control unit for generating a plurality of sense amplifier enable signals;
- a plurality of sense amplifier units driven by the sense amplifier enable signals and having a plurality of sense amplifiers, wherein the sense amplifiers operate in an automatic verify program mode to automatically perform program and verify operations for corresponding cells, upon pre-program and post-program operations of the memory cells, and operate in an iterative program and verify mode to iteratively perform erase and verify operations for corresponding cells, upon the erase operation;
- and
- a plurality of connection switching units for transferring a bias voltage applied from the sense amplifier unit of the plurality of the sense amplifier units to the corresponding memory cells of the sector, depending on a plurality of control 'signals.
2 more elements
A method of erasing a flash memory device, comprising the steps of:
- (a) automatically performing pre-program and verify operations using an automatic verify program method depending on an erase command of the flash memory cell;
- (b) iteratively performing erase and verify operations using an iterative program and verify method;
- and
- (c) automatically performing post-program and verify operations using the automatic verify program method..
1 more element
Dependencies are inferred from the claim text.