V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment

A read sensor having an air bearing surface for confronting a surface of a rotating disc, the read sensor comprising:

• a first elongated free layer having an air bearing surface;
• a second elongated free layer having an air bearing surface and positioned such that the first elongated free layer and the second elongated free layer are oriented at an angle relative to the air bearing surface, and such that a portion of the second elongated ferromagnetic free layer overlaps a portion of the first elongated ferromagnetic free layer proximate to the air bearing surface to form a v-shape;
• and
• a nonmagnetic spacer positioned between the first elongated free layer and the second elongated free layer.

A magnetoresistive sensor having an air bearing surface for confronting a surface of a rotating disc, the magnetoresistive sensor comprising:

• a first ferromagnetic free layer;
• a second ferromagnetic free layer positioned such that a quiescent state magnetization of the first elongated ferromagnetic free layer is aligned generally orthogonal to a quiescent state magnetization of the second elongated ferromagnetic free layer due to shape anisotropy;
• and
• a nonmagnetic spacer layer positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.

A magnetoresistive element comprising:

• a first free layer having a shape anisotropy induced first magnetization direction;
• a second free layer overlapping a portion of the first free layer and having a shape anisotropy induced second magnetization direction, the second magnetization direction positioned at an angle relative to the first magnetization direction;
• and
• a spacer layer positioned between the overlapping portions of the first free layer and the second free layer.

A method of forming a magnetoresistive sensor, the method comprising:

• forming a first elongated ferromagnetic free layer having a first quiescent state magnetization direction;
• forming a nonmagnetic spacer layer over the first ferromagnetic free layer;
• forming a thin ferromagnetic protective layer over the nonmagnetic spacer layer;
• etching the thin ferromagnetic protective layer to expose a portion of the nonmagnetic spacer layer;
• and
• forming a second elongated ferromagnetic free layer having a second quiescent state magnetization direction over the thin ferromagnetic protective layer such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction and such that the combination of the first elongated ferromagnetic free layer, the nonmagnetic spacer layer, the thin ferromagnetic protective layer, and the second elongated ferromagnetic free layer forms the magnetoresistive sensor.