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US 2003/0214022 A1Published application
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-Suk Yang, Sang-Ho Song, Hong-Sik Jeong, Ki-Nam Kim
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Abstract
An etch-stop layer is selectively provided between layers of a multiple-layered circuit in a selective manner so as to allow for outgassing of impurities during subsequent fabrication processes. The etch-stop layer is formed over an underlying stud so as to serve as an alignment target during formation of an overlying stud formed in an upper layer. In this manner multiple-layered circuits, for example memory devices, can be fabricated in relatively dense configurations.
Claims8
A method of forming a semiconductor device comprising:
- forming a first dielectric layer on a substrate;
- forming a second dielectric layer on the first dielectric layer;
- forming a stud through the first and second dielectric layers;
- forming a third dielectric layer over the top of the stud and the second dielectric layer;
- removing a portion of the second dielectric layer at the top of the stud, to create a void region in the second dielectric layer at the top of the stud and under the third dielectric layer;
- and
- forming a first pad of a first etch stop material in the void region.
4 more elements
Dependencies are inferred from the claim text.