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US 2003/0213993 A1Published application
Trench mosfet with field relief feature
AssigneeInternational Rectifier Corporation
InventorsKyle Spring, Jianjun Cao, Timothy D. Henson
Life of this patent
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Abstract
A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.
Claims23
A MOS-gated device comprising:
- a substrate of a first conductivity type;
- a common conduction region of said first conductivity type;
- a base region of a second conductivity type formed over said common conduction region to a first depth;
- a plurality of trenches formed to extend below said first depth, each trench including a gate insulation layer disposed on at least one side wall thereof and filled with a conductive gate material;
- a plurality of source regions formed above said base region;
- and
- a plurality of field relief regions of said second conductivity formed in said common conduction region and extending to a depth below said first depth;
- wherein said field relief regions are lightly doped.
5 more elements
A MOS-gated device comprising:
- a substrate;
- a common conduction region of said first conductivity type;
- a channel region of a second conductivity type formed over said common conduction region to a first depth;
- a plurality of trenches formed to extend below said first depth, each trench including a gate insulation layer disposed on at least one side wall thereof and filled with a conductive gate material;
- a plurality of conductive regions of said first conductivity formed above said channel region;
- and
- a plurality of field relief regions of said second conductivity formed in said common conduction region and extending to a depth below said first depth;
- wherein said field relief regions are lightly doped.
5 more elements
A method for increasing the breakdown voltage of a MOS-gated device, the MOS-gated device including a channel region of a first conductivity formed over a common conduction region of a second conductivity, the method comprising:
- forming a lightly doped field relief region of a same conductivity as said channel region in said common conduction region below said channel region.
Dependencies are inferred from the claim text.