Upper chamber for high density plasma CVD

An apparatus for processing semiconductor substrates, the apparatus comprising:

• a chamber defining a plasma processing region therein, the chamber including a bottom, a side wall, and a dome disposed on top of the side wall, the dome having a dome top;
• a top RF coil disposed above the dome top;
• and
• a ground shield disposed adjacent a corner region of the dome between the dome top and a side portion of the dome, the ground shield comprising an aluminum block.

An apparatus for processing semiconductor substrates, the apparatus comprising:

• a chamber defining a plasma processing region therein, the chamber including a bottom, a side wall, and a dome disposed on top of the side wall, the dome having a dome top;
• a top RF coil disposed above the dome top;
• and
• a side RF coil, a heating element, and a cooling element which are disposed adjacent a side portion of the dome, the side RF coil being decoupled from the heating element and the cooling element.

An apparatus for processing semiconductor substrates, the apparatus comprising:

• a chamber defining a plasma processing region therein, the chamber including a bottom, a side wall, and a dome disposed on top of the side wall, the dome having a dome top;
• a top RF coil disposed above the dome top;
• a cold plate disposed above the top RF coil;
• and
• a cooling system coupled with the cold plate to circulate a cooling fluid to the cold plate, the cooling system including a flow control device to adjust a flow rate of cooling fluid to the cold plate in response to operating conditions inside the chamber.