Substrate support with extended radio frequency electrode upper surface

A method for depositing a layer on a substrate comprising:

• positioning a substrate on a substrate support, the substrate support comprising,
• a conductive portion for applying an electrical field to a supported substrate;
• and
• a dielectric upper surface including a central upper surface portion configured to contact a center of the substrate, and a peripheral upper surface portion recessed from a plane of the supported substrate by a distance of 3 mm or less, the peripheral upper surface portion extending beyond an edge of the supported substrate;
• applying an electrical potential to the conductive portion to provide a homogenous electrical field at an edge of the substrate relative to a center of the substrate;
• and
• depositing a layer on the substrate using a high density plasma chemical vapor deposition technique.

A method for improving center-to-edge gap fill uniformity of material formed on a substrate by high density plasma chemical vapor deposition (HDP-CVD), the method comprising:

• providing a substrate support within a processing chamber, the substrate support including an upper surface having a peripheral portion recessed by a distance of 3 mm or less from a central upper surface portion;
• disposing a substrate upon the substrate support such that the peripheral recessed portion extends beyond an outer edge of the substrate;
• applying an RF bias to the substrate support to create an electric field over the substrate support, the electric field exhibiting a uniform direction and magnitude over the substrate edge relative to a center of the substrate;
• and
• promoting a HDP-CVD process such that material is deposited on center and edge portions of the substrate.

An apparatus for performing high density plasma chemical vapor deposition of material upon a substrate, the apparatus comprising:

• a chamber defining a plasma processing region therein, the chamber including a bottom, a side wall, and a dome disposed on top of the side wall, the dome having a dome top and having a side portion defining a chamber diameter;
• a vacuum system including a pump for evacuating the chamber;
• a processing gas source in fluid communication with the chamber;
• a top RF coil disposed above the dome top;
• a side RF coil disposed adjacent the side portion of the dome;
• a substrate bias source;
• a substrate support positioned within the processing chamber, the substrate support including,
• a conductive portion configured to receive a bias from the substrate bias source and to apply an electrical field over a supported substrate;
• and
• a dielectric upper surface including a central upper surface portion configured to contact a center of the substrate, and a peripheral upper surface portion recessed from a plane of the supported substrate by a distance of 3 mm or less, the peripheral upper surface portion extending beyond an edge of the supported substrate, to provide a homogenous electrical field at an edge of the substrate relative to a center of the substrate.