Methods for use of pulsed voltage in a plasma reactor

An etching for forming an opening in an insulating material deposited using a plasma enhanced chemical vapor deposition technique for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and a power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path, said method comprising:

• placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
• generating a plasma above said semiconductor substrate;
• delivering an electrical signal to said pedestal from said power source, wherein a voltage of said electrical signal oscillates between a positive voltage phase and a negative voltage phase;
• delivering a positive voltage spike to said pedestal during said electrical signal positive voltage phase, said delivering said positive voltage spike to said pedestal comprises generating a positive voltage spike within a secondary power source and delivering said positive voltage spike to said pedestal during said electrical signal positive voltage phase during said electrical signal positive voltage phase when said predetermined voltage level is reached;
• and
• forming at least a portion of an opening in an insulating material.

A method of forming an opening in an insulating material for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and a power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path, said method comprising:

• placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer, said material layer deposited by plasma enhanced chemical vapor deposition;
• generating a plasma above said semiconductor substrate;
• delivering an electrical signal to said pedestal from said power source, wherein a voltage of said electrical signal oscillates between a positive voltage phase and a negative voltage phase;
• delivering a positive voltage spike to said pedestal during said electrical signal positive voltage phase, said delivering said positive voltage spike to said pedestal comprises generating a positive voltage spike within a secondary power source and delivering said positive voltage spike to said pedestal during said electrical signal positive voltage phase during said electrical signal positive voltage phase when said predetermined voltage level is reached;
• and
• forming at least a portion of an opening in an insulating material.