MIS field effect transistor and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasato Koyama, Akira Nishiyama
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Abstract
There is disclosed a MIS field effect transistor, comprising a silicon substrate, an insulating film formed over the silicon substrate and containing silicon and at least one of nitrogen and oxygen, a metal oxynitride film formed on the insulating film and containing at least one kind of metal atom selected from the group consisting of zirconium, hafnium and a lanthanoide series metal, the metal oxynitride film containing nitrogen atom not bonding with the metal atom without metal-nitrogen bond at the density of higher than 1019/cm3, and a gate electrode formed on the metal oxynitride film.
Claims20
A MIS field effect transistor, comprising:
- a silicon substrate;
- an insulating film formed over said silicon substrate and containing silicon and at least one of nitrogen and oxygen;
- a metal oxynitride film formed on said insulating film and containing at least one kind of metal atom selected from the group consisting of zirconium, hafnium and a lanthanoide series metal, said metal oxynitride film containing nitrogen atom not bonding with said metal atom without metal-nitrogen bond at the density of higher than 1019/cm3;
- and
- a gate electrode formed on said metal oxynitride film.
A MIS field effect transistor, comprising:
- a silicon substrate;
- an insulating film formed over said silicon substrate and containing silicon and at least one of nitrogen and oxygen;
- a metal oxynitride film formed on said insulating film and containing at least one kind of metal atom selected from the group consisting of zirconium, hafnium and a lanthanoide series metal, said nitrogen atom being substantially bonded to nitrogen or oxygen;
- and
- a gate electrode formed on said metal oxynitride film.
A method for manufacturing a MIS field effect transistor, comprising:
- supplying at least one metal selected from the group consisting of zirconium, hafnium and a lanthanoide series metal over a surface of a silicon substrate together with nitrogen to form a metal nitride film;
- annealing said surface of said silicon substrate and said metal nitride film to convert said metal nitride film into metal oxynitride film and to form an insulating film containing at least one of nitrogen and oxygen and silicon between said surface of said silicon substrate and said metal oxynitride film, thus obtaining a gate insulating film;
- and
- forming a gate electrode on said gate insulating film.
Dependencies are inferred from the claim text.