High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane

A method for forming a composite silicon carbide structure suitable for use in fabricating high temperature semiconductor devices, comprising the steps of:

• a) providing a first substrate wafer of silicon carbide,
• b) forming a layer of silicon dioxide on a surface of said first substrate wafer,
• c) providing a second pattern wafer of silicon,
• d) doping a surface of said second wafer to enable conversion of said doped surface into a layer of silicon carbide of a targeted resistivity,
• e) bonding said first substrate wafer to said second pattern wafer with said layer of silicon dioxide of said first substrate contacting said doped surface of said second wafer wherein said bond is formed between said doped surface and said silicon dioxide layer,
• f) removing all of said silicon from said pattern wafer thus leaving said doped silicon layer bonded to said oxide layer secured to said silicon carbide wafer,
• g) converting said doped silicon surface to silicon carbide to provide a surface of silicon carbide capable of being processed into a semiconductor device, secured to a silicon dioxide layer secured to a silicon carbide wafer to create a high temperature composite structure.