Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture therefor

A method of manufacturing a semiconductor device, comprising:

• providing a doped layer over a semiconductor substrate;
• creating an isolation trench in the doped layer, wherein the isolation trench has a bottom surface and a sidewall;
• and
• forming a dopant barrier layer on the sidewall;
• and
• introducing a doped region in the bottom surface.

An integrated circuit, comprising:

• a doped layer located over a semiconductor substrate;
• an isolation structure, including;
• an isolation trench located in the doped layer, wherein the isolation trench has a bottom surface and a sidewall;
• and
• a dopant barrier layer located on the sidewall;
• and
• a doped region located in the bottom surface;
• transistors located over the doped layer;
• and
• interconnects located within interlevel dielectric layers located over the transistors, which connect the transistors to form an operational integrated circuit.