US 2003/0211696 A1 · Semiconductor device and fabrication method thereof

Abstract

A semiconductor device is provided that comprises a gate oxide film, a gate electrode, a nitride film, a low concentration impurity area, and a high concentration impurity are. The gate oxide film is formed on a semiconductor substrate. The gate electrode is formed on a predetermined region of the gate oxide film, and an upper portion thereof is wider than a lower portion thereof by a predetermined width. The nitride film is formed at a side of the lower portion of the gate electrode, and a width of the nitride film is equal to the predetermined width. The low concentration impurity area is formed within the semiconductor substrate except at a portion thereof under the lower portion of the gate electrode. The high concentration impurity area is formed within the semiconductor substrate except at a portion thereof under the lower portion of the gate electrode.

Claims11

Dependent claims

A semiconductor device comprising:

a gate oxide film formed on a semiconductor substrate;
a gate electrode formed on a predetermined region of the gate oxide film, an upper portion thereof being wider than a lower portion thereof by a predetermined width;
a nitride film formed at a side of the lower portion of the gate electrode, a width of the nitride film being equal to the predetermined width;
a low concentration impurity area formed within the semiconductor substrate except at a portion thereof under the lower portion of the gate electrode;
and
a high concentration impurity area formed within the semiconductor substrate except at a portion thereof under the lower portion of the gate electrode.

3 more elements

A method for fabricating a semiconductor device, comprising the steps of:

(a) forming a gate oxide film on a semiconductor substrate;
(b) forming a first photo-resist film pattern having a predetermined width on the gate oxide film, and then injecting a low concentration of impurity ions into an exposed portion of the semiconductor substrate by using the photo-resist film pattern as a mask;
(c) removing the first photo-resist film pattern, and forming a nitride film pattern on the gate oxide film except at a portion where the first photo-resist film pattern was positioned so that the nitride film pattern is provided with an opened portion;
(d) forming a poly-crystalline silicon layer on the nitride film pattern and an exposed portion of the gate oxide film;
(e) partially etching the poly-crystalline silicon layer and the nitride film pattern such that an end portion having a predetermined width of the nitride film pattern near the opened portion thereof remains, and a portion of the poly-crystalline silicon layer on the exposed gate oxide film and on the remaining portion of the nitride film pattern remains;
and
(f) injecting a high concentration of impurity ions into the semiconductor substrate by using the nitride film pattern and the poly-crystalline silicon layer that remain after the step of (e), as a mask.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and fabrication method thereof

Life of this patent

Semiconductor device and fabrication method thereof

Life of this patent

Abstract

Claims11