Method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorNobutaka Ohyagi
Life of this patent
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Abstract
There is provided a semiconductor device manufacturing method which comprises a step of forming titanium silicide layers (conductive patterns) on a silicon substrate (semiconductor substrate), a step of forming a cover insulating film (underlying insulating film), a step of forming a laminated film containing an alumina film (metal oxide film) on the cover insulating film, a first etching step of forming first holes in the laminated film by etching the laminated film, a cleaning step of cleaning the first holes, and a second etching step of forming second holes in the cover insulating film by etching the cover insulating film via the first holes under second etching conditions after the cleaning step.
Claims17
A method of manufacturing a semiconductor device comprising the steps of:
- forming conductive pattern made of alloy consisting of semiconductor and refractory metal on a semiconductor substrate;
- forming an underlying insulating film that covers the conductive pattern;
- forming a laminated film, containing a metal oxide film therein, on the underlying insulating film;
- a first etching step of forming a first hole in the laminated film over the conductive pattern by selectively etching the laminated film under first etching conditions;
- a cleaning step of cleaning the first hole;
- and
- a second etching step of forming a second hole in the underlying insulating film to expose the conductive pattern by selectively etching the underlying insulating film via the first hole under second etching conditions after the cleaning step.
Dependencies are inferred from the claim text.