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US 2003/0211683 A1Published application
Method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorJong Su Kim
Life of this patent
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Abstract
The present invention discloses a method for manufacturing a semiconductor device. A device isolation film has a shape of an insulating spacer at an interface of active regions composed of a epitaxial silicon layer in a device isolation region of a semiconductor substrate and active regions composed of a semiconductor substrate, thereby minimizing a size of the device isolation region, maximizing a size of the active regions, and achieving a high integration of the device.
Claims8
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming a stacked structure of a pad oxide film and a nitride film on a semiconductor substrate;
- (b) forming trenches by etching the stacked structure and the semiconductor substrate by a predetermined depth, wherein trenches are alternately arranged in a form of a matrix in the semiconductor substrate so that the trench do not adjoin each other;
- (c) forming a first insulating spacer on the sidewalls of the trench;
- (d) selectively forming an epitaxial silicon layer in the trench to fill the trench and extrude upward higher than the nitride film;
- (e) planarizing the epitaxial silicon layer using the stacked structure of the pad oxide film and the nitride film as an etch stop layer;
- (f) removing the stacked structure of the pad oxide film and the nitride film to expose the semiconductor substrate to make the planarized epitaxial silicon layer extruded upward;
- (g) forming a second insulating spacer on a sidewall of the extruded epitaxial silicon layer so that the epitaxial silicon layer can be electrically isolated with an adjacent semiconductor substrate;
- (h) forming gate oxide film patterns on the epitaxial silicon layer and the semiconductor substrate, respectively;
- (i) forming gate electrodes on the each gate oxide film patterns;
- and
- (j) forming a source and a drain on the both sides of the gate electrode by an impurity implantation process using the gate electrode as a mask.
8 more elements
A semiconductor device comprising:
- a semiconductor substrate, as a first active region, on which rectangular trenches alternately formed in a form of a matrix;
- an epitaxial silicon layer, as a second active region, filling the trench and extruding upward so that the surface of the epitaxial silicon layer is higher than the surface of the substrate, wherein the epitaxial silicon layer in the trench is electrically isolated with the substrate by a first insulating spacer interposed therebetween and the extruded epitaxial silicon layer is electrically isolated with the substrate by a second insulating spacer formed on the both sides of the extruded epitaxial silicon layer;
- a gate electrode pattern formed on the first and the second active regions interposing a gate oxide;
- and
- source and drain regions on the both side of the gate electrode in the first and the second active regions.
2 more elements
Dependencies are inferred from the claim text.