Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
AssigneeIntel Corporation
InventorsRaza Arghavani, Robert Chau, Mark Doczy, Brian Roberds
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Abstract
Method of fabricating a semiconductor device. The semiconductor device comprises a substrate, a high-k gate dielectric layer formed on the substrate, and a hydrogen-free gate electrode deposited on the high-k gate dielectric layer wherein the hydrogen-free gate electrode is conductive. The method comprises depositing the high-k gate dielectric layer on the substrate, sputtering the gate electrode on the gate dielectric layer and treating the gate electrode such that the gate electrode is conductive.
Claims29
A semiconductor device comprising:
- a substrate;
- a high-k gate dielectric layer formed on said substrate;
- and
- a gate electrode including a hydrogen-free silicon layer deposited on said high-k gate dielectric layer wherein said hydrogen-free silicon layer is made from a silicon element and is made to be conductive.
A method of forming a semiconductor device comprising:
- depositing a high-k gate dielectric layer on a substrate;
- depositing a gate electrode on said gate dielectric layer, said gate electrode including a hydrogen-free silicon layer;
- and
- treating said gate electrode such that said gate electrode is conductive.
A method of forming a semiconductor device comprising:
- depositing a high-k gate dielectric layer on a substrate;
- forming a gate electrode on said gate dielectric layer, said gate electrode including a hydrogen-free silicon layer;
- and
- treating said gate electrode to ensure that said gate electrode is conductive.
A method of forming a semiconductor device comprising:
- depositing a high-k gate dielectric layer on a substrate;
- depositing a gate electrode on said gate dielectric layer by evaporating silicon crystals to form said gate electrode, said gate electrode including a hydrogen-free silicon layer;
- and
- treating said gate electrode such that said gate electrode is conductive.
Dependencies are inferred from the claim text.