Method of improving quality of interface between gate and gate oxide
OwnerJune-Min Yaoinventor
Life of this patent
Estimating the term…
Abstract
A method of improving quality of an interface between a gate and a gate oxide layer is disclosed. The method begins by providing a substrate with a gate oxide layer formed thereon. A nitrogen containing plasma treatment is then performed on the gate oxide layer, so that a top surface of the gate oxide layer is reacted to form a silicon oxy-nitride layer. A polysilicon layer is formed on the silicon oxy-nitride layer and subsequently patterned to form a polysilicon gate.
Claims9
A method of improving quality of an interface between a gate and a gate oxide layer, the method comprising steps of:
- providing a substrate with the gate oxide layer formed thereon;
- performing a nitrogen-containing plasma on the gate oxide layer, so that a top surface of the gate oxide layer is reacted to form a silicon oxy-nitride layer;
- depositing a polysilicon layer on the silicon oxy-nitride layer;
- and
- patterning the polysilicon layer to form a polysilicon gate.
A method of improving quality of an interface between a gate and a gate oxide layer, the method comprising steps of:
- providing a substrate with the gate oxide layer formed thereon;
- performing a nitrogen gas plasma on the gate oxide layer, so that a top surface of the gate oxide layer is reacted to form a silicon oxy-nitride layer;
- depositing a polysilicon layer on the silicon oxy-nitride layer;
- and
- patterning the polysilicon layer to form a polysilicon gate.
Dependencies are inferred from the claim text.