US 2003/0211668 A1 · Method of fabricating thin film transistor

Abstract

A thin film transistor has a laminated structure comprising a semiconductor thin film, a gate insulator formed in contact with the surface of the semiconductor thin film, and a gate electrode disposed on the face side of the semiconductor thin film, and is formed on a substrate in a predetermined plan view shape. To fabricate the thin film transistor, first, a first step is carried out in which a semiconductor thin film having a clean surface is formed over the substrate. Next, a second step is carried out in which a protective film PF is formed so as to cover the clean surface of the semiconductor thin film. Further, in a third step, the semiconductor thin film is patterned together with the protective film PF according to the predetermined plan view shape of the thin film transistor. Thereafter, a fourth step is carried out in which the protective film PF is removed from the upper side of the patterned semiconductor thin film to expose a clean surface. Subsequently, a fifth step is carried out in which a gate insulator is formed in contact with the exposed surface of the semiconductor thin film.

Claims60

Dependent claims

A method of fabricating a thin film transistor having a laminated structure comprising a semiconductor thin film, an insulating film formed in contact with the surface of said semiconductor thin film, and a gate electrode disposed on the face side or the back side of said semiconductor thin film, and formed on a substrate in a predetermined plan view shape, said method comprising:

a first step of forming a semiconductor thin film having a clean surface over said substrate,
a second step of forming a protective film so as to cover said clean surface of said semiconductor thin film,
a third step of patterning said semiconductor thin film together with said protective film according to said plan view shape of said thin film transistor,
a fourth step of removing said protective film from the upper side of said patterned semiconductor thin film to expose said clean surface of said semiconductor thin film, and
a fifth step of forming an insulating film in contact with said exposed surface of said semiconductor thin film.

2 more elements

A method of producing a liquid crystal display device comprising a pair of substrates jointed to each other with a gap therebetween, a liquid crystal disposed in said gap, pixel electrodes and thin film transistors for driving said pixel electrodes provided on one of said substrates, and a counter electrode provided on the other of said substrates, wherein

said thin film transistor has a laminated structure comprising a semiconductor thin film, an insulating film provided in contact with the surface of said semiconductor thin film, and a gate electrode disposed on the face side or the back side of said semiconductor thin film, and
said thin film transistor is formed on one of said substrates in a predetermined plan view shape by:
a first step for forming a semiconductor thin film having a clean surface over a substrate,
a second step of forming a protective film so as to cover said clean surface of said semiconductor thin film,
a third step of patterning said semiconductor thin film together with said protective film according to said plan view shape of said thin film transistor,
a fourth step of removing said protective film from the upper side of said patterned semiconductor thin film to expose said clean surface, and
a fifth step of forming an insulating film in contact with said exposed surface of said semiconductor thin film.

4 more elements

A liquid crystal display device comprising a pair of substrates jointed to each other with a gap therebetween, a liquid crystal disposed in said gap, pixel electrodes and thin film transistors for driving said pixel electrodes provided on one of said substrates, and a counter electrode provided on the other of said substrates, wherein

said thin film transistor has a laminated structure comprising a semiconductor thin film, an insulating film formed in contact with the surface of said semiconductor thin film, and a gate electrode disposed on the face side or the back side of said semiconductor thin film, and is formed on one of said substrates in a predetermined plan view shape,
said semiconductor thin film is provided by forming a semiconductor thin film over said substrate in the state of having a clean surface, thereafter forming a protective film so as to cover said clean surface, then pattering said semiconductor thin film together with said protective film according to said predetermined plan view shape, and removing said protective film to expose said clean surface, and
said insulating film is formed in contact with said exposed surface of said semiconductor thin film.

A method of producing an electroluminescence display device comprising electroluminescence devices and thin film transistors for driving said electroluminescence devices on a substrate, wherein

said thin film transistor has a laminated structure comprising a semiconductor thin film, an insulating film provided in contact with the surface of said semiconductor thin film, and a gate electrode disposed on the face side or the back side of said semiconductor thin film, and
said thin film transistor is formed on said substrate in a predetermined plan view shape by:
a first step for forming a semiconductor thin film having a clean surface over a substrate,
a second step of forming a protective film so as to cover said clean surface of said semiconductor thin film,
a third step of patterning said semiconductor thin film together with said protective film according to said plan view shape of said thin film transistor,
a fourth step of removing said protective film from the upper side of said patterned semiconductor thin film to expose said clean surface, and
a fifth step of forming an insulating film in contact with said exposed surface of said semiconductor thin film.

4 more elements

Dependencies are inferred from the claim text.

Method of fabricating thin film transistor

Life of this patent

Method of fabricating thin film transistor

Life of this patent

Abstract

Claims60