Method for micro-fabricating a pixelles infrared imaging device

A method for micro-fabricating a pixelless thermal imaging device, the imaging device for up-converting a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon, the method comprising the steps of:

• providing a first substrate, the first substrate having a surface suitable for subsequent crystal growth;
• crystallographically growing an integrated QWIP-LED wafer on the surface of the first substrate comprising the steps of:
• growing an etch stop layer;
• growing a bottom contact layer;
• growing a plurality of layers forming a n-type QWIP and a LED;
• and,
• growing a top contact layer;
• providing an optical coupler on the top of the QWIP-LED wafer for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the n-type QWIP;
• patterning a device mesa by removing the layers outside the device mesa down to the bottom contact layer, the device mesa approximately comprising an active area of the thermal imaging device, the active area being approximately the size of the 2-dimensional image;
• depositing a top metal contact onto the top contact layer such that the top metal contact forms a ring surrounding the active area;
• depositing a bottom metal contact onto the bottom contact layer outside the device mesa;
• depositing a coating onto the top surface of the active area;
• isolating material defects in the active area of the QWIP-LED;
• bonding the QWIP-LED wafer to an optical faceplate such that the QWIP-LED is in optical communication with the optical faceplate for light emitted from the LED;
• removing the first substrate;
• and,
• removing the etch stop layer.

A method for micro-fabricating a pixelless thermal imaging device, the imaging device for up-converting a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon, the method comprising the steps of:

• providing a first substrate, the first substrate having a surface suitable for subsequent crystal growth;
• crystallographically growing on the surface of the first substrate a plurality of layers forming an integrated QWIP-LED wafer;
• patterning a device mesa, the device mesa approximately comprising an active area of the thermal imaging device, the active area being approximately the size of the 2-dimensional image;
• and,
• isolating material defects in the active area of the QWIP-LED.

A method for micro-fabricating a pixelless thermal imaging device, the imaging device for up-converting a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon, the method comprising the steps of:

• providing a first substrate, the first substrate having a surface suitable for subsequent crystal growth;
• crystallographically growing an integrated QWIP-LED wafer on the surface of the first substrate comprising the steps of:
• growing an etch stop layer;
• growing a bottom contact layer;
• growing a plurality of layers forming a n-type QWIP and a LED;
• and,
• growing a top contact layer;
• patterning a device mesa by removing the layers outside the device mesa down to the bottom contact layer, the device mesa approximately comprising an active area of the thermal imaging device, the active area being approximately the size of the 2-dimensional image;
• depositing a top metal contact onto the top contact layer such that the top metal contact forms a ring surrounding the active area;
• depositing a bottom metal contact onto the bottom contact layer outside the device mesa;
• isolating material defects in the active area of the QWIP-LED;
• bonding the top surface of the QWIP-LED wafer to an optical faceplate such that the QWIP-LED is in optical communication with the optical faceplate for light emitted from the LED;
• removing the first substrate;
• removing the etch stop layer;
• providing an optical coupler at the bottom of the QWIP-LED wafer for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the n-type QWIP;
• and,
• bonding the bottom surface of the QWIP-LED wafer to a plate such that the QWIP-LED is in optical communication with the plate for M/FIR light.