Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region

A method for producing an active region for a long wavelength light emitting device, the method comprising the steps of:

• placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film;
• supplying to the reactor a group-III-V precursor mixture comprising arsine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine is the group-V precursor material;
• growing a sublayer of InxGaAs1-x, where x is equal to or greater than 0;
• discontinuing the group-III precursor mixture;
• and
• supplying to the reactor a group-V precursor mixture comprising arsine and dimethylhydrazine where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine.

A method for producing an active region for a long wavelength light emitting device, comprising:

• providing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor;
• supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine;
• and
• pressurizing the reactor to at least 100 millibar (mbar) to grow an indium gallium arsenide nitride layer.

A method for producing an active region for a long wavelength light emitting device, comprising:

• providing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor;
• supplying to the reactor a group-III-V precursor mixture, where the group-III precursor mixture includes alkyl-gallium and alkyl-indium, and the group-V precursor mixture comprises arsine and dimethylhydrazine;
• and
• growing a layer of indium gallium arsenide nitride commensurate with light emission at a wavelength longer than 1.2 um over the substrate by minimizing the amount of arsine and maximizing the amount of dimethylhydrazine.