Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same

A positive type resist composition comprising:

• a surfactant selected at least front a polycarboxylate surfactant and a nonionic surfactant having a hydrophile-lypophile balance (HLB) value of 9 or less;
• an alkali-soluble siloxane polymer having silicon atoms in which 19% or less of a total silicon atoms are directly bonded to a hydroxy group;
• and
• a photosensitive compound.

A positive type resist composition comprising:

• a surfactant selected at least from a polycarboxylate surfactant, a sorbitan ester surfactant, a poly ethyleneglycol monoester surfactant, and a poly ethyleneglycol monoether surfactant;
• an alkali-soluble siloxane polymer having silicon atoms in which 19% or less of a total silicon atoms are directly bonded to a hydroxy group;
• and
• a photosensitive compound.

An alkali-soluble siloxane polymer, wherein the alkali-soluble siloxane polymer is expressed in the Formula (1);

• the alkali-soluble siloxane polymer is contained in a positive type resist composition;
• and a 1 μm thick resist film formed of the positive type resist composition has 5% to 60% of transmittance to i-line radiation;
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• in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different;
• “A” expresses a group having a phenolic hydroxyl group expressed by the Formula (2);
• and
• “a,” “b,” and “c” satisfy the following relation:
• a+b+c=1;
• 44
• in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different;
• “m” expresses an integer;
• and
• “n” expresses an integer of 1 to 5.

A process for forming a resist pattern, comprising the steps of:

• forming a resist film utilizing a positive type resist composition;
• and
• forming a resist pattern by developing, wherein the positive type resist composition comprises:
• an alkali-soluble siloxane polymer expressed by the following Formula (1);
• a photosensitive compound;
• and
• a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation;
• 45
• in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different;
• “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group;
• and “a”, “b,” and “c” satisfy the following relation;
• a+b+c=1.

A resist pattern formed by a process for forming a resist pattern, wherein the process comprises the steps of:

• forming a resist film utilizing a positive type resist composition;
• and
• forming a resist pattern by developing, wherein the positive type resist composition comprises:
• an alkali-soluble siloxane polymer expressed by the following Formula (1);
• a photosensitive compound;
• and
• a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of trainsittance to i-line radiation;
• 46
• in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different;
• “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group;
• and “a”, “b,” and “c” satisfy the following relation;
• a+b+c=1.

An electronic device comprising:

• a pattern,
• wherein the pattern is formed of a resist pattern, and the resist pattern is formed by a process for forming a resist pattern comprising the steps of:
• forming a resist film utilizing a positive type resist composition;
• and
• forming a resist pattern by developing, wherein the positive type resist composition comprises:
• an alkali-soluble siloxane polymer expressed by the following Formula (1);
• a photosensitive compound;
• and
• a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of tratsntttalice to i-line radiation;
• 47
• in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different;
• “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group;
• and “a”, “b,” and “c” satisfy the following relation, a+b+c=1.

A process for manufacturing an electronic device, comprising the steps of:

• forming a resist pattern on an underlying layer by a process for forming a resist pattern;
• and
• patterning the underlying layer by one of etching and lift-off, utilizing the resist pattern as a mask, wherein the process for forming a resist pattern comprises the steps of:
• forming a resist film utilizing a positive type resist composition;
• and
• forming a resist pattern by developing, wherein the positive type resist composition comprises:
• an alkali-soluble siloxane polymer expressed by the following Formula (1);
• a photosensitive compound;
• and
• a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-inLe radiation;
• 48
• in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different;
• “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group;
• and “a”, “b,” and “c” satisfy the following relation;
• a+b+c=1.