Semiconductor device and method for fabricating the same
AssigneeFujitsu Limited
InventorYuji Awano
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Abstract
The semiconductor device comprises insulation films 30a-30f formed on a semiconductor substrate 10, and a thermal conductor 42 buried in the insulation films. The thermal conductor is formed on a tube structure of carbon atoms. The thermal conductor is formed on a tube structure of carbon atoms, which is a material of very high thermal conductivity, can effectively radiate heat of a very high generated in semiconductor elements, etc., such as transistors 24a, 24b, etc. Accordingly, the semiconductor device can have good heat radiation characteristics.
Claims20
A semiconductor device comprising:
- an insulation film formed on a semiconductor substrate;
- and
- a thermal conductor buried in the insulation film,
- the thermal conductor being formed of a tube structure of carbon atoms.
A semiconductor device comprising a thermal conductor buried in a semiconductor substrate,
- the thermal conductor being formed of a tube structure of carbon atoms.
A method for fabricating a semiconductor device comprising the steps of:
- forming an insulation film on a semiconductor substrate;
- and
- forming an opening in the insulation film;
- and
- growing a thermal conductor of a tube structure of carbon atoms in the opening.
A method for fabricating a semiconductor device comprising the steps of:
- forming an opening in a semiconductor substrate;
- and
- growing a thermal conductor of a tube structure of carbon atoms in the opening.
Dependencies are inferred from the claim text.