Mosfet device having geometry that permits frequent body contact
AssigneeGeneral Semiconductor, Inc.
InventorRichard A. Blanchard
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Abstract
A MOSFET device design is provided that effectively addresses the problems arising from the parasitic bipolar transistor that is intrinsic to the device. The MOSFET device comprises: (a) a body region; (b) a plurality of body contact regions; (c) a plurality of source regions; (d) a plurality of drain regions; and (d) a gate region. In plan view, the source regions and the drain regions are arranged in orthogonal rows and columns, and at least a portion of the body contact regions are bordered by four of the source and drain regions, preferably two source regions and two drain regions.
Claims27
A MOSFET device comprising:
- a semiconductor region of first conductivity type having an upper surface;
- a plurality of source regions of a second conductivity type formed within an upper portion of said semiconductor region adjacent said upper surface;
- a plurality of drain regions of said second conductivity type formed within an upper portion of said semiconductor region adjacent said upper surface;
- a plurality of body contact regions of said first conductivity type formed within an upper portion of said semiconductor region adjacent said upper surface;
- said body contact regions having a net doping concentration that is higher than that of said semiconductor region;
- and
- a gate region disposed over said upper surface of said semiconductor region, said gate region comprising (a) a gate electrode region and (b) a gate dielectric layer disposed between said gate electrode region and said semiconductor region,
- wherein, when viewed from above said upper surface, said source regions and said drain regions are arranged in orthogonal rows and columns, and wherein at least a portion of said body contact regions are bordered by four of said source and drain regions.
A MOSFET semiconductor device comprising:
- (a) a body region;
- (b) a plurality of body contact regions;
- (c) a plurality of source regions;
- (d) a plurality of drain regions;
- and (d) a gate region, wherein, in plan view, said source regions and said drain regions are arranged in orthogonal rows and columns, and wherein at least a portion of said body contact regions are bordered by four of said source and drain regions.
Dependencies are inferred from the claim text.