EEPROM device with substrate hot-electron injector for low-power
AssigneeInternational Business Machines Corporation
InventorsJin Cai, Tak Hung Ning
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Abstract
A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.
Claims19
An EEPROM device adapted for large scale integration, comprising:
- a body;
- and
- means for injecting a programming current into said body.
An EEPROM array, comprising:
- a large plurality of EEPROM devices, wherein each of said device comprising:
- a source, a drain, a body, a control gate, and means for injecting a programming current into said body;
- and
- a plurality of control lines, comprising:
- a source-line connecting to said source, a bitline connecting to said drain, a wordline connecting to said body, a plate-line connecting to said control gate, and an injection-line connecting to said means for injecting.
A method for fabricating an EEPROM device adapted for large scale integration, wherein said device comprising a body and means for injecting a programming current into said body, comprising the step of:
- performing a layer transfer of said device between a first substrate and a second substrate, whereby on said second substrate said device is oriented up-side-down in relation to orientation of said device on said first substrate.
Dependencies are inferred from the claim text.