Electron beam exposure apparatus and electron beam processing apparatus

An electron beam exposure apparatus for exposing wafer with an electron beam, comprising:

• a first electromagnetic lens system operable to make said electron beam that was substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said electron beam that was substantially perpendicularly incident on said second plane be incident on said wafer substantially perpendicularly;
• a magnification correction lens operable to correct magnification of said electron beam by said first electromagnetic lens system and/or said second electromagnetic lens system;
• a deflection system operable to deflect said electron beam to a position on said wafer, that is to be irradiated with said electron beam;
• and
• a deflection-correction optical system operable to correct deflection aberration caused by said deflection system.

An electron beam processing unit comprising:

• a first electromagnetic lens system operable to make an electron beam that was substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said electron beam that was substantially perpendicularly incident on said second plane be incident on a third plane substantially perpendicularly;
• a rotation correction lens operable to correct rotation of said electron beam caused by said first electromagnetic lens system and/or said second electromagnetic lens system;
• a deflection system operable to deflect said electron beam to a position on said third plane, that is to be irradiated with said electron beam;
• and
• a deflection-correction optical system operable to correct deflection aberration caused by said deflection system.

An electron beam processing unit comprising:

• a first electromagnetic lens system operable to make an electron beam that was substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said electron beam that was substantially perpendicularly incident on said second plane be incident on a third plane substantially perpendicularly;
• a magnification correction lens operable to correct magnification of said electron beam by said first electromagnetic lens system and/or said second electromagnetic lens system;
• a deflection system operable to deflect said electron beam to a position on said third plane, that is to be irradiated with said electron beam;
• and
• a deflection-correction optical system operable to correct deflection aberration caused by said deflection system.

An electron beam exposure apparatus for exposing wafer with a plurality of electron beams, comprising:

• a first electromagnetic lens system operable to make said electron beams that were substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said electron beams that were substantially perpendicularly incident on said second plane be incident on said wafer substantially perpendicularly;
• and
• a plurality of first rotation correction lenses operable to correct rotations of said plurality of electron beams caused by said first electromagnetic lens system and/or said second electromagnetic lens system, respectively.

An electron beam exposure apparatus for exposing wafer with a plurality of electron beams, comprising:

• a first electromagnetic lens system operable to make said plurality of electron beams that were substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said plurality of electron beams that were substantially perpendicularly incident on said second plane be incident on said wafer substantially perpendicularly;
• and
• a plurality of first magnification correction lenses operable to correct magnifications of said plurality of electron beams by said first electromagnetic lens system and/or said second electromagnetic lens system.

An electron beam processing apparatus comprising:

• a first electromagnetic lens system operable to make a plurality of electron beams that were substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said plurality of electron beams that were substantially perpendicularly incident on said second plane be incident on a third plane substantially perpendicularly;
• and
• a plurality of first rotation correction lenses operable to correct rotations of said plurality of electron beams caused by said first electromagnetic lens system and/or said second electromagnetic lens system.

An electron beam processing apparatus comprising:

• a first electromagnetic lens system operable to make a plurality of electron beams that were substantially perpendicularly incident on a first plane be incident on a second plane substantially perpendicularly;
• a second electromagnetic lens system operable to make said plurality of electron beams that were substantially perpendicularly incident on said second plane be incident on a third plane substantially perpendicularly;
• and
• a plurality of first magnification correction lenses operable to correct magnifications of said plurality of electron beams by said first electromagnetic lens system and/or said second electromagnetic lens system.