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US 2003/0207472 A1Published application
Method for controlling deposition of dielectric films
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Dan Gealy, Gurtej S. Sandhu
Life of this patent
Estimating the term…
Abstract
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.
Claims117
A method for depositing a film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and at least one oxidizer to the deposition chamber;
- forming a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition;
- and
- adjusting at least one of a flow rate of the at least one oxidizer to the deposition chamber and a partial pressure of the at least one oxidizer in the deposition chamber during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition.
2 more elements
A method for depositing a film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C., wherein the deposition chamber comprises a delivery device having a delivery outlet region from which one or more organometallic precursors are delivered to within the deposition chamber;
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, and a titanium-containing organometallic precursor to the deposition chamber;
- and
- forming a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition;
- and
- adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition.
3 more elements
A method for depositing a film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, a hydrogen-containing composition, and an oxidizer to the deposition chamber;
- and
- forming a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition;
- and
- adjusting at least one of a flow rate of the hydrogen-containing composition provided to the deposition chamber and a partial pressure of the hydrogen-containing composition in the deposition chamber during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition.
3 more elements
A method for depositing a film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber;
- forming a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition;
- and
- adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film while a flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition, wherein an increase in deposition pressure results in an increase in percent titanium in the barium-strontium-titanate film and also an increase in a rate of deposition of the barium-strontium-titanate film.
2 more elements
A method for use in formation of a capacitor, the method comprising:
- providing a first electrode having a surface in a deposition chamber at a temperature less than 680° C.;
- forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein forming the barium-strontium-titanate film comprises:
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber,
- depositing a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein depositing the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition, and adjusting at least one of a flow rate of the oxidizer provided to the deposition chamber and a partial pressure of the oxidizer in the deposition chamber during the deposition of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition;
- and
- forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film.
3 more elements
A method for use in formation of a capacitor, the method comprising:
- providing a first electrode having a surface in a deposition chamber at a temperature less than 680° C., wherein the deposition chamber comprises a delivery device having a delivery outlet region from which one or more organometallic precursors are delivered to within the deposition chamber;
- forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein forming the barium-strontium-titanate film comprises:
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, and a titanium-containing organometallic precursor to the deposition chamber, and
- depositing a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor, wherein depositing the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition, and
- adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition;
- and
- forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film.
4 more elements
A method for use in formation of a capacitor, the method comprising:
- providing a first electrode having a surface in a deposition chamber at a temperature less than 680° C.;
- forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein forming the barium-strontium-titanate film comprises:
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, a hydrogen-containing composition, and an oxidizer to the deposition chamber, and
- forming a barium-strontium-titanate film on at least the portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition, and
- adjusting at least one of a flow rate of the hydrogen-containing composition provided to the deposition chamber and a partial pressure of the hydrogen-containing composition in the deposition chamber during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition;
- and
- forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film.
4 more elements
A method for use in formation of a capacitor, the method comprising:
- providing a first electrode having a surface in a deposition chamber at a temperature less than 680° C.;
- forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein forming the barium-strontium-titanate film comprises:
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber,
- forming a barium-strontium-titanate film on at least a portion of the first electrode surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition, and
- adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition, wherein an increase in deposition pressure results in an increase in percent titanium in the barium-strontium-titanate film and also an increase in a rate of deposition of the barium-strontium-titanate film;
- and
- forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film.
4 more elements
A method of forming a titanium-containing dielectric film comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber;
- and
- depositing a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber;
- increasing the percent titanium in the barium-strontium-titanate film being deposited by decreasing the flow rate of the oxidizer provided to the deposition chamber during formation of the barium-strontium-titanate film.
2 more elements
A method of forming a titanium-containing dielectric film comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C., wherein the deposition chamber comprises a delivery device having a delivery outlet region;
- providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber;
- and
- depositing a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber;
- and
- decreasing a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during the deposition of the barium-strontium-titanate film to increase the percent titanium in the barium-strontium-titanate film.
3 more elements
A method for depositing a dielectric film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a plurality of precursors comprising A and B and an oxidizer to the deposition chamber having the substrate assembly positioned therein to deposit a film of ABO3 on at least a portion of the surface of the substrate assembly;
- and
- adjusting at least one of a flow rate of the oxidizer provided to the deposition chamber and a partial pressure of the oxidizer in the deposition chamber during deposition of the ABO3 film to produce different concentrations of one of A and B at different elevations in the ABO3 film.
1 more element
A method for depositing a dielectric film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a plurality of precursors comprising A and B to the deposition chamber having the substrate assembly positioned therein to deposit a film of ABO3 on at least a portion of the surface of the substrate assembly, wherein the deposition chamber comprises a delivery device having a delivery outlet region from which one or more precursors are delivered to within the deposition chamber;
- and
- adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during deposition of the ABO3 film to produce different concentrations of one of A and B at different elevations in the ABO3 film
1 more element
A method for depositing a dielectric film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a plurality of precursors comprising A and B to the deposition chamber having the substrate assembly positioned therein to deposit a film of ABO3 on at least a portion of the surface of the substrate assembly along with an oxidizer and a hydrogen-containing composition;
- and
- adjusting at least one of a flow rate of the hydrogen-containing composition provided to the deposition chamber and a partial pressure of the hydrogen-containing composition in the deposition chamber during deposition of the ABO3 film to produce different concentrations of one of A and B at different elevations in the ABO3 film.
1 more element
A method for depositing a dielectric film, the method comprising:
- providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
- providing a plurality of precursors comprising A and B to the deposition chamber having the substrate assembly positioned therein to deposit a film of ABO3 on at least a portion of the surface of the substrate assembly along with an oxidizer;
- and
- adjusting a deposition pressure of the deposition chamber during deposition of the ABO3 film to produce different concentrations of one of A and B at different elevations in the ABO3 film while maintaining a flow rate of the precursors comprising A and B provided to the deposition chamber, wherein an adjustment in deposition pressure also results in an adjustment to a rate of deposition of the ABO3 film.
1 more element
Dependencies are inferred from the claim text.