Vertically stacked field programmable nonvolatile memory and method of fabrication
AssigneeMatrix Semiconductor, Inc.
InventorsVivek Subramanian, James M. Cleeves
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Abstract
Abstract of Disclosure A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
Claims15
A process for fabricating a state change element in a 3-D semiconductor memory device comprising the steps of:
- forming a semiconductor layer;
- and
- oxidizing at least a portion of the semiconductor layer in a plasma to form an oxide antifuse layer overlying the semiconductor layer.
A process for fabricating a cell in a 3-D semiconductor memory device comprising:
- forming a first conductor layer;
- forming a first semiconductor layer overlying the conductor layer;
- oxidizing at least a portion of the first semiconductor layer in a plasma to form an oxide layer thereon;
- forming a second semiconductor layer overlying the oxide layer;
- forming a second conductor layer overlying the second semiconductor layer;
- and
- sequentially etching the second semiconductor layer, the oxide layer, the first semiconductor layer and the first conductor layer to form a pillar of the 3-D semiconductor memory device.
Dependencies are inferred from the claim text.