Detecting a defect of an integrated circuit
AssigneeTexas Instruments Incorporated
InventorsDaniel Lee Corum, Taylor Jon Lowry
Life of this patent
Estimating the term…
Abstract
Detecting a defect of an integrated circuit includes illuminating an integrated circuit with an optical beam. The integrated circuit includes a substrate, a dielectric layer disposed outwardly from the substrate, and a sequence of metal links disposed within the dielectric layer. An end metal link of the sequence of metal links is grounded. A change of relative brightness of the dielectric layer proximate to the sequence of metal links is detected. The change of relative brightness comprises a difference between a first brightness associated with a first metal link and a second brightness associated with a second metal link coupled to the first metal link. The change of relative brightness is associated with a defect of the integrated circuit.
Claims18
A method for detecting a defect of an integrated circuit, comprising:
- illuminating an integrated circuit with an optical beam, the integrated circuit comprising a substrate, a dielectric layer disposed outwardly from the substrate, and a sequence of metal links disposed within the dielectric layer, an end metal link of the sequence of metal links being grounded;
- detecting a change of relative brightness of the dielectric layer proximate to the sequence of metal links, the change of relative brightness comprising a difference between a first brightness associated with a first metal link and a second brightness associated with a second metal link coupled to the first metal link;
- and
- associating the change of relative brightness with a defect of the integrated circuit.
A system for detecting a defect of an integrated circuit, comprising:
- a source operable to illuminate an integrated circuit with an optical beam, the integrated circuit comprising a substrate, a dielectric layer disposed outwardly from the substrate, and a sequence of metal links disposed within the dielectric layer, an end metal link of the sequence of metal links being grounded;
- and
- a microscope operable to detect a change of relative brightness of the dielectric layer proximate to the sequence of metal links, the change of relative brightness comprising a difference between a first brightness associated with a first metal link and a second brightness associated with a second metal link coupled to the first metal link, the change of relative brightness associated with a defect of the integrated circuit.
A system for detecting a defect of an integrated circuit, comprising:
- means for illuminating an integrated circuit with an optical beam, the integrated circuit comprising a substrate, a dielectric layer disposed outwardly from the substrate, a sequence of metal links disposed within the dielectric layer, an end metal link of the sequence of metal links being grounded;
- means for detecting a change of relative brightness of the dielectric layer proximate to the sequence of metal links, the change of relative brightness comprising a difference between a first brightness associated with a first metal link and a second brightness associated with a second metal link coupled to the first metal link;
- and
- means for associating the change of relative brightness with a defect of the integrated circuit.
A method for detecting a defect of an integrated circuit, comprising:
- illuminating an integrated circuit with an optical beam, the integrated circuit comprising a substrate, a dielectric layer, a sequence of metal links, and a protective overcoat, the dielectric layer disposed outwardly from the substrate and comprising an organo-silicate glass having a dielectric constant of approximately 2.9, the sequence of metal links disposed within the dielectric layer, the sequence of metal links comprising a via chain comprising a plurality of vias coupling the metal links, an end metal link of the sequence of metal links being grounded, the protective overcoat disposed outwardly from the dielectric layer;
- detecting a change of relative brightness of the dielectric layer proximate to the sequence of metal links, the change of relative brightness comprising a difference between a first brightness associated with a first metal link and a second brightness associated with a second metal link coupled to the first metal link, a first number of metal links between the first metal link and the end metal link being greater than a second number of links between the second metal link and the end metal link, and the first brightness associated with the first metal link being greater than the second brightness associated with the second metal link;
- associating the change of relative brightness with a change in resistance;
- and
- associating the change in resistance with a defect of the integrated circuit.
Dependencies are inferred from the claim text.