Semiconductor device and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorWoo-chan Jung
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode structure on a surface of a semiconductor substrate;
- depositing a gate poly oxide (GPOX) layer on a surface of the gate electrode structure and on the semiconductor substrate;
- cleaning the surface of the semiconductor substrate to remove any residue and the GPOX layer;
- forming an etch stopper on the surface of the gate electrode structure and on the semiconductor substrate;
- and
- depositing a high-density plasma (HDP) oxide layer on the etch stopper.
A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode structure on a surface of a semiconductor substrate;
- forming an etch stopper on a surface of the gate electrode structure and on the semiconductor substrate;
- and
- depositing a high-density plasma (HDP) oxide layer on the etch stopper.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode structure formed on a surface of a semiconductor substrate;
- an etch stopper covering the semiconductor substrate and the surface of the gate electrode structure;
- and
- a high-density plasma (HDP) oxide layer formed on the etch stopper.
Dependencies are inferred from the claim text.