Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film
AssigneeKabushiki Kaisha Toshiba
InventorAkira Hokazono
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Abstract
Provided is a semiconductor device, comprising a gate electrode formed on a semiconductor substrate, source/drain diffusion layers formed on both sides of the gate electrode, a gate electrode side-wall on the side of the source/drain diffusion layer and a gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode and having an L-shaped/reversed L-shaped cross-sectional shape, and a semiconductor layer extending over the gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode.
Claims23
A semiconductor device, comprising:
- a gate electrode formed on a surface region of a semiconductor substrate;
- a source region and a drain region which are formed in the surface region of the semiconductor substrate on both sides of the gate electrode;
- a gate side-wall insulating film having a first portion covering a side-wall of the gate electrode on the side of each of the source region and the drain region and a second portion covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode;
- and
- a silicon containing layer containing silicon formed on each of the source region and the drain region, the silicon containing layer covering each of the source region and the drain region.
A semiconductor device comprising:
- a gate electrode formed on an upper surface of a semiconductor substrate;
- a source region and a drain region which are formed on both sides of the gate electrode;
- a gate side-wall insulating film covering a side wall of the gate electrode on the side of each of the source region and the drain region and a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode;
- a silicon containing layer formed on each of the source region and the drain region, the silicon containing layer covering each of the source region and the drain region;
- and
- a buried device isolation region comprising a trench contiguous to the outer peripheral edge portion of each of the source region and the drain region and having an insulating film buried therein,
- wherein the buried device isolation region includes:
- a trench formed in an upper surface of a semiconductor substrate;
- a first buried insulating film formed to extend along the inner wall of the trench in a manner to be buried in a lower portion of the trench to reach a predetermined depth from the open surface of the trench;
- and
- a second buried insulating film formed to cover said first buried insulating film in an upper portion of the trench.
A semiconductor device according to claim 12, wherein the silicide layer includes a nickel silicide layer.
Dependencies are inferred from the claim text.