II-VI Semiconductor device with BeTe buffer layer
Assignee3M Innovative Properties Company
InventorThomas J. Miller
Life of this patent
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Abstract
A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top electrical contacts. A BeTe buffer layer is provided between the GaAs substrate and the stack of II-VI semiconductor layers. The BeTe buffer layer reduces stacking fault defects at the interface between the GaAs substrate and the stack of II-VI semiconductor layers.
Claims19
A II-VI semiconductor device, comprising:
- a stack of II-VI semiconductor layers;
- a GaAs substrate adjacent the stack of II-VI semiconductor layers;
- and
- a BeTe buffer layer between the GaAs substrate and the stack of II-VI semiconductor layers, the BeTe buffer layer having a thickness of more than about 80 Å to thereby reduce stacking fault defects in a region near an interface between the GaAs substrate and the stack of II-VI semiconductor layers.
A method of fabricating a II-VI semiconductor device, comprising the steps of:
- placing a GaAs substrate into a molecular beam epitaxy chamber;
- growing a BeTe buffer layer in operational contact with the GaAs substrate to a thickness of more than about 80 Å;
- and
- growing subsequent layers upon the BeTe buffer layer to form a stack of II-VI semiconductor layers of a II-VI semiconductor device.
Dependencies are inferred from the claim text.