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AssigneesDenso Corporation, Nippon Soken, Inc.
InventorsItsuhei Ogata, Masanori Yamada, Eturo Yasuda, Kaoru Kuzuoka
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The thermistor portion of a thermistor device consists of a mixed sintered body of aY(Cr0.5Mn0.5)O3.bAl2O3 made of the perovskite-type compound Y(Cr0.5Mn0.5)O3 and Al2O3, or a mixed sintered body of aY(Cr0.5Mn0.5)O3.b(Al2O3+Y2O3) made of Y(Cr0.5Mn0.5)O3, Al2O3 and Y2O3. The mole fractions a and b have the relationships 0.05≦a<1.0, 0<b≦0.95 and a+b=1. This is required to obtain a thermistor device that has stable characteristics and exhibits a small change in its resistance value, even in a heat history from room temperature to 1000° C. or the like, and also has a resistance value of 50 Ω to 100 kΩ in the temperature range from room temperature to 1000° C. The precursor compounds triethoxy yttrium, diethoxy manganese and tris (2,4-pentadiono) chromium are mixed in a mixed solvent of ethanol and isopropyl alcohol, and refluxing is performed to obtain a composite metal alkoxide solution. Then the metal salt precipitating agent of deionized water is added, the mixture is stirred and mixed and refluxing is performed to obtain a gelatinous precipitate of metallic salts containing Y, Mn and Cr. This precipitate is separated by filtration, dried and calcined to obtain powdered raw material with a composition of 38Y(Cr0.5Mn0.5)O3.62Y2O3, the same as that of a thermistor device. Thereafter, this powdered raw material is molded and sintered to obtain the thermistor device as a sintered body. Thereby, the dispersion of the resistance value of the thermistor can be reduced. An anti-reducing coating made of an anti-reducing material such as Y2O3, Al2O3, Y3Al5O12, 3Al2O3.SiO3, Y2SiO5 or the like is formed on the surface of a thermistor portion consisting of a mixed sintered body of Y(CrMn)O3.Y2O3 (or Y(CrMn)O3.Al2O3) or the like to form a thermistor device with a pair of lead wires attached. Thereby, the thermistor device exhibits resistance value stability even when subjected to a reducing atmosphere.
A thermistor device comprising a mixed sintered body of (M1M2)O3.Al2O3 consisting of (M1M2)O3 and Al2O3, wherein M1 is at least one or more elements selected from the elements of Group 2A or Group 3A of the periodic table excluding La, and M2 is at least one or more elements selected from the elements of Group 2B, Group 3B, Group 4A, Group 5A, Group 6A, Group 7A or Group 8 of the periodic table.
A thermistor device comprising a mixed sintered body of (M1M2)O3.Al2O3.Y2O3 consisting of (M1M2)O3, Al2O3 and Y2O3, wherein M1 is at least one or more elements selected from the elements of Group 2A or Group 3A of the periodic table excluding La, and M2 is at least one or more elements selected from the elements of Group 2B, Group 3B, Group 4A, Group 5A, Group 6A, Group 7A or Group 8 of the periodic table.
A method for manufacturing a thermistor device comprising a sintered body, comprising:
A method for manufacturing a thermistor device comprising a sintered body, comprising:
A method for manufacturing a thermistor device comprising a sintered body of (M1M2)O3.Y2O3 consisting of (M1M2)O3 and Y2O3, wherein M1 is at least one or more elements selected from the elements of Group 2A or Group 3A of the periodic table excluding La, and M2 is at least one or more elements selected from the elements of Group 2B, Group 3B, Group 4A, Group 5A, Group 6A, Group 7A or Group 8 of the periodic table, comprising:
A thermistor device comprising a thermistor portion (13) and an anti-reducing coating (14) consisting of an anti-reducing material formed on the surface of this thermistor portion (13).
A method of manufacturing a thermistor device comprising a thermistor portion (13) made of thermistor material and an anti-reducing coating (14) consisting of an anti-reducing material formed on the surface of this thermistor portion (13), comprising the steps of:
A temperature sensor comprising:
Dependencies are inferred from the claim text.