Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
AssigneeAxcelis Technologies, Inc.
InventorVictor M. Benveniste
Life of this patent
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Abstract
Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.
Claims29
An ion implantation system for implanting one or more workpieces with an ion beam, comprising:
- an ion source producing an elongated ion beam along a longitudinal path, the ion beam comprising a transverse width and a transverse height defining a first aspect ratio, wherein the transverse width is larger than the transverse height, the first aspect ratio comprising a ratio of the transverse width and the transverse height;
- a beamline system comprising a mass analyzer positioned downstream from the ion source along the path to receive the elongated ion beam, the mass analyzer providing a magnetic field across the path so as to deflect ions from the ion beam at varying trajectories according to mass to provide an elongated mass analyzed ion beam including ions of a desired mass, the mass analyzed ion beam comprising a second aspect ratio substantially similar to the first aspect ratio;
- and
- an end station receiving the mass analyzed ion beam from the beamline system and supporting at least one workpiece along the path for implantation using the mass analyzed ion beam.
A beamline system for providing an elongated mass analyzed ion beam to an end station in an ion implantation system, the beamline system comprising:
- a first magnet receiving an elongated ion beam having a first aspect ratio along a path, the mass analyzer, the first magnet providing a first magnetic field to the elongated ion beam to direct individual ions of a desired mass along the path and to deflect ions of undesired mass away from the path;
- and
- a second magnet located downstream of the first magnet along the path, the second magnet providing a second magnetic field to the ions of the desired mass along the path between the first magnet and the end station to direct individual ions of the desired mass to the end station in the form of an elongated mass analyzed ion beam comprising a second aspect ratio substantially similar to the first aspect ratio.
A method of implanting a workpiece using an ion beam in an ion implantation system, comprising:
- creating an elongated ion beam having a first aspect ratio;
- mass analyzing the elongated ion beam using a first magnetic field;
- collimating the ion beam using a second magnetic field to provide an elongated mass analyzed ion beam having a second aspect ratio substantially the same as the first aspect ratio;
- and
- providing at least a portion of the elongated mass analyzed ion beam to at least one workpiece so as to implant the at least one workpiece with ions from the elongated mass analyzed ion beam.
An ion implantation system for implanting a workpiece using an ion beam, comprising:
- means for creating an elongated ion beam having a first aspect ratio;
- means for mass analyzing the elongated ion beam using a first magnetic field;
- means for collimating the ion beam using a second magnetic field to provide an elongated mass analyzed ion beam having a second aspect ratio substantially the same as the first aspect ratio;
- and
- means for providing at least a portion of the elongated mass analyzed ion beam to at least one workpiece so as to implant the at least one workpiece with ions from the elongated mass analyzed ion beam.
Dependencies are inferred from the claim text.